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NTZD5110N
TYPICAL CHARACTERISTICS
30
C iss
5
T J = 25 ° C
20
T J = 25 ° C
4
3
I D = 0.2 A
C oss
V GS = 0 V
2
10
1
0
C rss
0
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
GATE?TO?SOURCE OR DRAIN?TO?SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate?to?Source and
Drain?to?Source Voltage vs. Total Charge
10
V GS = 0 V
1
0.1
0.01
T J = 85 ° C
T J = 25 ° C
0.4
0.6
0.8
1.0
1.2
V SD , SOURCE?TO?DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
ORDERING INFORMATION
NTZD5110NT1G
NTZD5110NT5G
Device
Package
SOT?563
(Pb?Free)
SOT?563
Shipping
4000 / Tape & Reel
8000 / Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
http://onsemi.com
4
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